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(R) STPAC02F1 RF DETECTOR FOR POWER AMPLIFIER CONTROL WITH INTERNAL TEMPERATURE COMPENSATION IPAD TM MAIN PRODUCT CHARACTERISTICS 0.8 to 2.5GHz frequency range Detection diode voltage drop compensation Temperature compensation Fast response time Low Power consumption Chip Scale device Low parasitic impedance DESCRIPTION The STPAC02F1 is an integrated RF detector for power control chain. It has been developed to convert the RF signal coming from the external coupler into a DC signal usable by the mobile digital stage. It is based on the use of two similar diodes, one assuming the signal detection while the second one is used to compensate the ambient temperature effect. A biasing stage suppresses the detection diode drop voltage effect. The use of the IPAD technology allows the RF front-end designer to save PCB area and to drastically suppress the parasitic inductances of the package. Target applications are cellular phones and PDA using GSM, DCS, PCS, AMPS, TDMA , CDMA and 800MHz to 2100MHz frequency ranges. BENEFITS Flip-Chip package PIN CONFIGURATION (ball side) 3 2 Not used GND GND GND VBias 1 OUT GND RFin A B C The use of IPAD technology allows the RF front-end designer to save PCB area and to drastically suppress the parasitic inductances. FUNCTIONAL DIAGRAM Antenna Coupler Bias voltage VBIAS RF input DC output OUT Low pass filter Thermal compensation RF detector STPAC02F1 GND TM : IPAD is a trademark of STMicroelectronics. October 2003 - Ed: 1 1/5 STPAC02F1 ABSOLUTE RATINGS (Tamb = 25C) Symbol VBIAS PRF FOP VPP TOP TSTG Bias voltage RF power at the RF input Operating frequency range ESD level as per MIL-STD 883E method 3015.7 notice 8 (HBM) Operating temperature range Storage temperature range Parameter and test conditions Value 5 20 0.8 to 2.5 250 -30 to +85 -55 to 150 Unit V dBm GHz V C C ELECTRICAL CHARACTERISTICS (Tamb = 25C) PARAMETERS RELATED TO BIAS VOLTAGE Symbol VBIAS IBIAS Parameter Operating bias voltage Bias current VBIAS = 3.3 V Test conditions Min. 2.3 Typ. 2.8 1.1 Max. 3.3 1.6 Unit V mA PARAMETERS RELATED TO DETECTION FUNCTION (VBIAS = 2.8 V, DC output load = 200 k) Symbol VDCout Parameter DC output voltage (see fig. 1) Test conditions F = 1.75 GHz, PRF = 10 dBm F = 1.75 GHz, PRF = -20 dBm F = 0.9 GHz, PRF = 10 dBm F = 0.9 GHz, PRF = -20 dBm VDCout DC output voltage variation 2.3V < VBIAS < 3.3V, (see fig. 1) F = 1.85 GHz, PRF = 10 dBm Min. 0.63 0.20 0.69 0.20 Typ. 0.69 0.22 0.75 0.22 100 Max. 0.75 0.24 0.83 0.24 mV Unit V PARAMETERS RELATED TO RESPONSE TIME (VBIAS = 2.8 V, DC output load = 200 k) Symbol tVBIAS tRFon tRFoff Parameter Delay at VBIAS ON (see fig. 3) Delay at RF ON (see fig. 2) Delay at RF OFF (see fig. 2) Test conditions VBIAS from 0 to 3V PRF from 0 to 20dBm PRF from 20 to 0dBm Min. Typ. 1 0.2 0.2 Max. Unit V 2/5 STPAC02F1 Fig. 1: VDC output measurement circuit and temperature compensation measurement. Fig. 2: RF Power ON/OFF response time set-up. Bias voltage Climatic Chamber -30C < T amb < +85C RF power amplifier RF Generator RF in RF power amplifier RF Generator RF in STPAC02 OUT STPAC02 OUT DC out voltage Power supply Bias voltage RLOAD RF in RF scope Out Fig. 3: Power supply turn ON response time. Fig. 4: Temperature sensitivity versus RF Power in (VBIAS = 2.8V, Freq. = 900 MHz). Delta VOUT (mV/C) 0.3 RF power amplifier RF Generator RF in OUT STPAC02 0.2 Bias voltage RF scope 0.1 OUT t Pon Bias voltage 0.0 -15 -10 -5 0 5 10 15 Pin (dBm) Fig. 5: STPAC02 Output voltage vs. wide RF power range. Vout @ 25C (Vdc) 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 -20 -15 -10 -5 0 5 10 15 20 Fig. 6: Power detector sensitivity vs. wide RF power range. Sensitivity(mV/dB) 140 120 100 80 60 40 20 0 -20 -15 -10 -5 0 5 10 15 20 900MHz 1750MHz Pin (dBm) Pin (dBm) 3/5 STPAC02F1 Fig. 7: STPAC02 Output voltage at Low RF power. Vout @ 25C (Vdc) 0.4 900MHz 1750MHz 22 Fig. 8: Power detector sensitivity at low RF power. Sensitivity(mV/dB) 0.35 17 0.3 12 0.25 7 0.2 -10 -9 -8 -7 -6 -5 -4 -3 -2 -1 0 2 -10 -8 -6 -4 -2 0 Pin (dBm) Pin (dBm) PACKAGE MECHANICAL DATA 500m 50 650m 65 315m 50 500m 50 1.57mm 50m FOOT PRINT RECOMMENDATIONS MARKING 1.57mm 50m Dot, ST logo xxx = marking yww = datecode (y = year ww = week) Copper pad Diameter : 250m recommended , 300m max 365 240 365 E Solder stencil opening : 330m Solder mask opening recommendation : 340m min for 300m copper pad diameter xxx y ww 40 220 All dimensions in m 4/5 STPAC02F1 FLIP-CHIP TAPE AND REEL SPECIFICATION Dot identifying Pin A1 location 4 +/- 0.1 O 1.5 +/- 0.1 1.75 +/- 0.1 3.5 +/- 0.1 0.73 +/- 0.05 All dimensions in mm 8 +/- 0.3 STE STE STE xxx yww User direction of unreeling xxx yww xxx yww 4 +/- 0.1 OTHER INFORMATION Ordering code STPAC02F1 Marking RBT Package Flip-Chip Weight 3.3 mg Base qty 5000 Delivery mode Tape & reel Note: More packing informations are available in the application notes: AN1235: ''Flip-Chip: Package description and recommandations for use'' AN1751: "EMI Filters: Recommendations and measurements" Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. (c) 2003 STMicroelectronics - All rights reserved. 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