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STPAC02F1
RF DETECTOR FOR POWER AMPLIFIER CONTROL WITH INTERNAL TEMPERATURE COMPENSATION
IPAD
TM
MAIN PRODUCT CHARACTERISTICS

0.8 to 2.5GHz frequency range Detection diode voltage drop compensation Temperature compensation Fast response time Low Power consumption Chip Scale device Low parasitic impedance
DESCRIPTION The STPAC02F1 is an integrated RF detector for power control chain. It has been developed to convert the RF signal coming from the external coupler into a DC signal usable by the mobile digital stage. It is based on the use of two similar diodes, one assuming the signal detection while the second one is used to compensate the ambient temperature effect. A biasing stage suppresses the detection diode drop voltage effect. The use of the IPAD technology allows the RF front-end designer to save PCB area and to drastically suppress the parasitic inductances of the package. Target applications are cellular phones and PDA using GSM, DCS, PCS, AMPS, TDMA , CDMA and 800MHz to 2100MHz frequency ranges. BENEFITS
Flip-Chip package
PIN CONFIGURATION (ball side)
3 2
Not used GND GND GND VBias
1
OUT GND RFin
A B C
The use of IPAD technology allows the RF front-end designer to save PCB area and to drastically suppress the parasitic inductances.
FUNCTIONAL DIAGRAM
Antenna Coupler
Bias voltage VBIAS RF input DC output OUT Low pass filter Thermal compensation
RF detector STPAC02F1
GND
TM : IPAD is a trademark of STMicroelectronics.
October 2003 - Ed: 1
1/5
STPAC02F1
ABSOLUTE RATINGS (Tamb = 25C) Symbol VBIAS PRF FOP VPP TOP TSTG Bias voltage RF power at the RF input Operating frequency range ESD level as per MIL-STD 883E method 3015.7 notice 8 (HBM) Operating temperature range Storage temperature range Parameter and test conditions Value 5 20 0.8 to 2.5 250 -30 to +85 -55 to 150 Unit V dBm GHz V C C
ELECTRICAL CHARACTERISTICS (Tamb = 25C) PARAMETERS RELATED TO BIAS VOLTAGE Symbol VBIAS IBIAS Parameter Operating bias voltage Bias current VBIAS = 3.3 V Test conditions Min. 2.3 Typ. 2.8 1.1 Max. 3.3 1.6 Unit V mA
PARAMETERS RELATED TO DETECTION FUNCTION (VBIAS = 2.8 V, DC output load = 200 k) Symbol VDCout Parameter DC output voltage (see fig. 1) Test conditions F = 1.75 GHz, PRF = 10 dBm F = 1.75 GHz, PRF = -20 dBm F = 0.9 GHz, PRF = 10 dBm F = 0.9 GHz, PRF = -20 dBm VDCout DC output voltage variation 2.3V < VBIAS < 3.3V, (see fig. 1) F = 1.85 GHz, PRF = 10 dBm Min. 0.63 0.20 0.69 0.20 Typ. 0.69 0.22 0.75 0.22 100 Max. 0.75 0.24 0.83 0.24 mV Unit V
PARAMETERS RELATED TO RESPONSE TIME (VBIAS = 2.8 V, DC output load = 200 k) Symbol tVBIAS tRFon tRFoff Parameter Delay at VBIAS ON (see fig. 3) Delay at RF ON (see fig. 2) Delay at RF OFF (see fig. 2) Test conditions VBIAS from 0 to 3V PRF from 0 to 20dBm PRF from 20 to 0dBm Min. Typ. 1 0.2 0.2 Max. Unit V
2/5
STPAC02F1
Fig. 1: VDC output measurement circuit and temperature compensation measurement. Fig. 2: RF Power ON/OFF response time set-up.
Bias voltage
Climatic Chamber -30C < T amb < +85C
RF power amplifier RF Generator RF in
RF power amplifier RF Generator RF in
STPAC02
OUT
STPAC02
OUT
DC out voltage Power supply Bias voltage RLOAD
RF in
RF scope
Out
Fig. 3: Power supply turn ON response time.
Fig. 4: Temperature sensitivity versus RF Power in (VBIAS = 2.8V, Freq. = 900 MHz).
Delta VOUT (mV/C)
0.3
RF power amplifier RF Generator RF in OUT
STPAC02
0.2
Bias voltage RF scope
0.1
OUT
t Pon
Bias voltage
0.0 -15
-10
-5
0
5
10
15
Pin (dBm)
Fig. 5: STPAC02 Output voltage vs. wide RF power range.
Vout @ 25C (Vdc)
2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 -20 -15 -10 -5 0 5 10 15 20
Fig. 6: Power detector sensitivity vs. wide RF power range.
Sensitivity(mV/dB)
140 120 100 80 60 40 20 0 -20 -15 -10 -5 0 5 10 15 20
900MHz 1750MHz
Pin (dBm)
Pin (dBm)
3/5
STPAC02F1
Fig. 7: STPAC02 Output voltage at Low RF power.
Vout @ 25C (Vdc)
0.4
900MHz 1750MHz
22
Fig. 8: Power detector sensitivity at low RF power.
Sensitivity(mV/dB)
0.35
17
0.3
12
0.25
7
0.2 -10 -9 -8 -7 -6 -5 -4 -3 -2 -1 0
2 -10 -8 -6 -4 -2 0
Pin (dBm)
Pin (dBm)
PACKAGE MECHANICAL DATA
500m 50 650m 65 315m 50
500m 50
1.57mm 50m
FOOT PRINT RECOMMENDATIONS
MARKING
1.57mm 50m
Dot, ST logo xxx = marking yww = datecode (y = year ww = week)
Copper pad Diameter : 250m recommended , 300m max
365
240
365
E
Solder stencil opening : 330m
Solder mask opening recommendation : 340m min for 300m copper pad diameter
xxx y ww
40
220
All dimensions in m
4/5
STPAC02F1
FLIP-CHIP TAPE AND REEL SPECIFICATION
Dot identifying Pin A1 location 4 +/- 0.1 O 1.5 +/- 0.1
1.75 +/- 0.1 3.5 +/- 0.1
0.73 +/- 0.05
All dimensions in mm
8 +/- 0.3
STE
STE
STE
xxx yww
User direction of unreeling
xxx yww
xxx yww
4 +/- 0.1
OTHER INFORMATION Ordering code STPAC02F1 Marking RBT Package Flip-Chip Weight 3.3 mg Base qty 5000 Delivery mode Tape & reel
Note: More packing informations are available in the application notes: AN1235: ''Flip-Chip: Package description and recommandations for use'' AN1751: "EMI Filters: Recommendations and measurements"
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. (c) 2003 STMicroelectronics - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain Sweden - Switzerland - United Kingdom - United States www.st.com 5/5


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